The Effect of a Metal Intralaver on the Heterojunction Band Offset: Extrinsic and Intrinsic Charge Neutrality Levels

نویسندگان

  • R. PEREZ
  • A. MUfiOZ
  • F. FLORES
چکیده

The effect of an Al metal intralayer on the ZnSe-Ge heterojunction band offset has been theoretically analysed using a consistent tight-binding calculation. In our analysis we show: (i) first, that the heterojunction band offset is basically modified by the first metal monolayer deposited at the interface; (ii) the changes in the band-offset are mainly due to the modifications introduced in the charge neutrality levels of the semiconductors forming the junction. This implies that extrinsic charge neutrality levels are responsible for the actual heterojunction band offsets. We have also considered different geometries for the first stages of the Al deposition at the interface. Our analysis of the band offset and the core level shift of the Al intralayer allows us to propose a model for the geometry of the growing metal.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

متن کامل

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

متن کامل

Direct determination of the band offset in ALD-grown ZnO/hydrogenated amorphous silicon heterojunctions from XPS valence band spectra

The chemical composition and band alignment at the heterointerface between ALD-grown zinc oxide (ZnO) and hydrogenated amorphous silicon (a-Si:H) is investigated using monochromatized X-ray photoelectron spectroscopy. A new approach for obtaining the valence band offset EV is developed, which consists in fitting the valence band (VB) spectrum obtained for a-Si:H with a thin ZnO overlayer as th...

متن کامل

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

متن کامل

Assessing the Relashionships of Teacher Affective Support and Student Emotional Support with Intrinsic Motivation and Extrinsic and Academic Amotivation with Mediation of Academic Emotions

Introduction: Teacher affective support, student emotional support, and academic emotions have important effects on a variety of student academic motivational orientations. Since no research has been done in this field, in this study, the relationship between teacher affective support and student emotional support with Intrinsic motivation, Extrinsic and Amotivation with the mediation of academ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002